The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction

M. Nielsen, R. Feidenhans'l, P.B. Howes, F. Grey, S. Weichel, J. Vedde

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearch

    Original languageEnglish
    Title of host publicationProgramme and abstracts
    Number of pages3
    Place of PublicationLondon
    PublisherInstitute of Physics
    Publication date1999
    Publication statusPublished - 1999
    EventCondensed matter and materials physics conference (CMMP '99) - Leicester (GB), 19-22 Dec
    Duration: 1 Jan 1999 → …

    Conference

    ConferenceCondensed matter and materials physics conference (CMMP '99)
    CityLeicester (GB), 19-22 Dec
    Period01/01/1999 → …

    Cite this

    Nielsen, M., Feidenhans'l, R., Howes, P. B., Grey, F., Weichel, S., & Vedde, J. (1999). The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction. In Programme and abstracts London: Institute of Physics.
    Nielsen, M. ; Feidenhans'l, R. ; Howes, P.B. ; Grey, F. ; Weichel, S. ; Vedde, J. / The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction. Programme and abstracts. London : Institute of Physics, 1999.
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    year = "1999",
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    Nielsen, M, Feidenhans'l, R, Howes, PB, Grey, F, Weichel, S & Vedde, J 1999, The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction. in Programme and abstracts. Institute of Physics, London, Condensed matter and materials physics conference (CMMP '99), Leicester (GB), 19-22 Dec, 01/01/1999.

    The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction. / Nielsen, M.; Feidenhans'l, R.; Howes, P.B.; Grey, F.; Weichel, S.; Vedde, J.

    Programme and abstracts. London : Institute of Physics, 1999.

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearch

    TY - ABST

    T1 - The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction

    AU - Nielsen, M.

    AU - Feidenhans'l, R.

    AU - Howes, P.B.

    AU - Grey, F.

    AU - Weichel, S.

    AU - Vedde, J.

    PY - 1999

    Y1 - 1999

    KW - Nye funktionelle materialer

    M3 - Conference abstract in proceedings

    BT - Programme and abstracts

    PB - Institute of Physics

    CY - London

    ER -

    Nielsen M, Feidenhans'l R, Howes PB, Grey F, Weichel S, Vedde J. The interface structure of directly bonded Si(001) wafers, studied by X-ray diffraction. In Programme and abstracts. London: Institute of Physics. 1999