The interface structure of directly bonded Si crystals studied by synchrotron X-ray diffraction

M. Nielsen, R. Feidenhans'l, P.B. Howes, F. Grey, S. Weichel, J. Vedde, K. Rasmussen

    Research output: Contribution to conferenceConference abstract for conferenceResearch

    Original languageEnglish
    Publication date1999
    Publication statusPublished - 1999
    Event1999 Joint international meeting: 196. Meeting of the Electrochemical Society; 1999 Fall meeting of the Electrochemical Society of Japan - Honolulu, HI, United States
    Duration: 17 Oct 199922 Oct 1999
    http://www.electrochem.org/meetings/biannual/196/meeting.htm

    Conference

    Conference1999 Joint international meeting: 196. Meeting of the Electrochemical Society; 1999 Fall meeting of the Electrochemical Society of Japan
    CountryUnited States
    CityHonolulu, HI
    Period17/10/199922/10/1999
    Internet address

    Cite this

    Nielsen, M., Feidenhans'l, R., Howes, P. B., Grey, F., Weichel, S., Vedde, J., & Rasmussen, K. (1999). The interface structure of directly bonded Si crystals studied by synchrotron X-ray diffraction. Abstract from 1999 Joint international meeting: 196. Meeting of the Electrochemical Society; 1999 Fall meeting of the Electrochemical Society of Japan, Honolulu, HI, United States.