The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction

M. Nielsen, M. Poulsen, R. Feidenhans'l, C. Kumpf, F. Grey, S. Weichel, J. Vedde, P.B. Howes

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearch

    Original languageEnglish
    Title of host publicationProgramme and abstracts
    Place of PublicationCopenhagen
    PublisherCentre for Crystallographic Studies
    Publication date2000
    Publication statusPublished - 2000
    Event31. Danske krystallografmøde; Dansync's 3. Årsmøde - København, Denmark
    Duration: 30 May 200031 May 2000

    Conference

    Conference31. Danske krystallografmøde; Dansync's 3. Årsmøde
    CountryDenmark
    CityKøbenhavn
    Period30/05/200031/05/2000

    Cite this

    Nielsen, M., Poulsen, M., Feidenhans'l, R., Kumpf, C., Grey, F., Weichel, S., ... Howes, P. B. (2000). The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction. In Programme and abstracts Copenhagen: Centre for Crystallographic Studies.
    Nielsen, M. ; Poulsen, M. ; Feidenhans'l, R. ; Kumpf, C. ; Grey, F. ; Weichel, S. ; Vedde, J. ; Howes, P.B. / The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction. Programme and abstracts. Copenhagen : Centre for Crystallographic Studies, 2000.
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    title = "The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction",
    keywords = "Nye funktionelle materialer",
    author = "M. Nielsen and M. Poulsen and R. Feidenhans'l and C. Kumpf and F. Grey and S. Weichel and J. Vedde and P.B. Howes",
    year = "2000",
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    booktitle = "Programme and abstracts",
    publisher = "Centre for Crystallographic Studies",

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    Nielsen, M, Poulsen, M, Feidenhans'l, R, Kumpf, C, Grey, F, Weichel, S, Vedde, J & Howes, PB 2000, The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction. in Programme and abstracts. Centre for Crystallographic Studies, Copenhagen, 31. Danske krystallografmøde; Dansync's 3. Årsmøde, København, Denmark, 30/05/2000.

    The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction. / Nielsen, M.; Poulsen, M.; Feidenhans'l, R.; Kumpf, C.; Grey, F.; Weichel, S.; Vedde, J.; Howes, P.B.

    Programme and abstracts. Copenhagen : Centre for Crystallographic Studies, 2000.

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearch

    TY - ABST

    T1 - The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction

    AU - Nielsen, M.

    AU - Poulsen, M.

    AU - Feidenhans'l, R.

    AU - Kumpf, C.

    AU - Grey, F.

    AU - Weichel, S.

    AU - Vedde, J.

    AU - Howes, P.B.

    PY - 2000

    Y1 - 2000

    KW - Nye funktionelle materialer

    M3 - Conference abstract in proceedings

    BT - Programme and abstracts

    PB - Centre for Crystallographic Studies

    CY - Copenhagen

    ER -

    Nielsen M, Poulsen M, Feidenhans'l R, Kumpf C, Grey F, Weichel S et al. The interface of directly bonded Si crystals studied by synchrotron X-ray diffraction. In Programme and abstracts. Copenhagen: Centre for Crystallographic Studies. 2000