The influence of nitride thickness variations on the switching speed of MNOS memory transistors

Erik Bruun

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    Abstract

    The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
    Original languageEnglish
    JournalI E E E Transactions on Electron Devices
    Volume25
    Issue number11
    Pages (from-to)1328-1331
    ISSN0018-9383
    DOIs
    Publication statusPublished - 1978

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