@article{72cfc692d5bc4162b50dd5fa8ec80232,
title = "The influence of nitride thickness variations on the switching speed of MNOS memory transistors",
abstract = "The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.",
author = "Erik Bruun",
note = "Copyright 1978 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",
year = "1978",
doi = "10.1109/T-ED.1978.19275",
language = "English",
volume = "25",
pages = "1328--1331",
journal = "I E E E Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",
number = "11",
}