The influence of nitride thickness variations on the switching speed of MNOS memory transistors

Research output: Contribution to journalLetterpeer-review

214 Downloads (Pure)

Abstract

The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
Original languageEnglish
JournalI E E E Transactions on Electron Devices
Volume25
Issue number11
Pages (from-to)1328-1331
ISSN0018-9383
DOIs
Publication statusPublished - 1978

Bibliographical note

Copyright 1978 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Fingerprint Dive into the research topics of 'The influence of nitride thickness variations on the switching speed of MNOS memory transistors'. Together they form a unique fingerprint.

Cite this