@inbook{2d33290407264f52a4c96f8c60ba226e,
title = "The effect of external stimuli on the performance of memristive oxides",
abstract = "This book chapter provides a comprehensive overview of the interrelationship between memristors properties and their responses to external stimuli such as electrical field, magnetic field, temperature, strain, and radiation. The ability of a material to change properties in response to external stimuli is an attractive feature that is gaining attention across many different fields. This feature is especially desirable for metal oxides already in use in applications such as light-emitting diodes and photodetectors, chemical sensors, transistors, and nonvolatile memories. This book chapter introduces the concepts of stimuli-responsiveness for metal oxide-based memristors, including the fundamental materials properties required for designing and understanding the new generation of memristors under external stimuli. It provides the readers with a comprehensive scientific literature review on the principles and the developments of the stimuli-responsive memristor. It presents several concrete examples showing the effect of external stimuli on the materials{\textquoteright} properties.",
keywords = "Resistive (switching) random access memory (RRAM), Memristor, Resistance, Oxide, High resistance state (HRS), Voltage, Switching, Nonvolatile memory",
author = "Yang Li and Christensen, {Dennis Valbj{\o}rn} and Simone Sanna and Vincenzo Esposito",
year = "2022",
doi = "10.1016/B978-0-12-814629-3.00011-8",
language = "English",
series = "Metal Oxides Series",
publisher = "Elsevier",
pages = "361--398",
editor = "Panagiotis Dimitrakis and Ilia Valov and Stefan Tappertzhofen",
booktitle = "Metal Oxides for Non-volatile Memory",
address = "United Kingdom",
}