The effect of biaxial strain on impurity diffusion in Si and SiGe

Arne Nylandsted Larsen; Nikolaj Zangenberg; Jacob Fage-Pedersen

doi:10.1016/j.mseb.2005.08.078

The effect of biaxial strain on impurity diffusion in Si and SiGe

Arne Nylandsted Larsen
, Nikolaj Zangenberg
, Jacob Fage-Pedersen

Aarhus University
University of British Columbia

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.

Original language	English
Journal	Materials Science and Engineering: B
Volume	124-125
Issue number	SI
Pages (from-to)	241-244
ISSN	0921-5107
DOIs	https://doi.org/10.1016/j.mseb.2005.08.078
Publication status	Published - 2005
Event	Symposium on Materials Science and Device Issues for Future Si-Based Technologies: Held at the 2005 EMRS Meeting - Strasbourg, France Duration: 31 May 2005 → 3 Jun 2005

Conference

Conference	Symposium on Materials Science and Device Issues for Future Si-Based Technologies
Country/Territory	France
City	Strasbourg
Period	31/05/2005 → 03/06/2005

Keywords

Diffusion studies
Biaxial strain
Molecular-beam epitaxy

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10.1016/j.mseb.2005.08.078

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title = "The effect of biaxial strain on impurity diffusion in Si and SiGe",

abstract = "Results from diffusion studies of different impurities in biaxially strained Si and Si{"}1{"}-{"}xGe{"}x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si{"}1{"}-{"}xGe{"}x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.",

keywords = "Diffusion studies, Biaxial strain, Molecular-beam epitaxy",

author = "Larsen, \{Arne Nylandsted\} and Nikolaj Zangenberg and Jacob Fage-Pedersen",

year = "2005",

doi = "10.1016/j.mseb.2005.08.078",

language = "English",

volume = "124-125",

pages = "241--244",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier",

number = "SI",

note = "Symposium on Materials Science and Device Issues for Future Si-Based Technologies : Held at the 2005 EMRS Meeting ; Conference date: 31-05-2005 Through 03-06-2005",

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TY - GEN

T1 - The effect of biaxial strain on impurity diffusion in Si and SiGe

AU - Larsen, Arne Nylandsted

AU - Zangenberg, Nikolaj

AU - Fage-Pedersen, Jacob

PY - 2005

Y1 - 2005

N2 - Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.

AB - Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.

KW - Diffusion studies

KW - Biaxial strain

KW - Molecular-beam epitaxy

U2 - 10.1016/j.mseb.2005.08.078

DO - 10.1016/j.mseb.2005.08.078

M3 - Conference article

SN - 0921-5107

VL - 124-125

SP - 241

EP - 244

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - SI

T2 - Symposium on Materials Science and Device Issues for Future Si-Based Technologies

Y2 - 31 May 2005 through 3 June 2005

ER -

The effect of biaxial strain on impurity diffusion in Si and SiGe

Abstract

Conference

Keywords

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