The effect of biaxial strain on impurity diffusion in Si and SiGe

Arne Nylandsted Larsen, Nikolaj Zangenberg, Jacob Fage-Pedersen

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.
Original languageEnglish
JournalMaterials Science and Engineering: B
Volume124-125
Issue numberSI
Pages (from-to)241-244
ISSN0921-5107
DOIs
Publication statusPublished - 2005
EventSymposium on Materials Science and Device Issues for Future Si-Based Technologies: Held at the 2005 EMRS Meeting - Strasbourg, France
Duration: 31 May 20053 Jun 2005

Conference

ConferenceSymposium on Materials Science and Device Issues for Future Si-Based Technologies
CountryFrance
CityStrasbourg
Period31/05/200503/06/2005

Keywords

  • Diffusion studies
  • Biaxial strain
  • Molecular-beam epitaxy

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