The deposition and control of self assembled silicon nano islands on crystalline silicon

Wolff-Ragnar Kiebach, Zhenrui Yu, Mariano Aceves-Mijares, Dongcai Bian, Jinhui Du

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO2 matrix and Si nano islands (Si nI) at c-Si/SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs. High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology. © 2008 World Scientific Publishing Company.
Original languageEnglish
JournalInternational Journal of High Speed Electronics and Systems
Volume18
Issue number4
Pages (from-to)901-910
ISSN0129-1564
DOIs
Publication statusPublished - 2008
Externally publishedYes

Cite this

Kiebach, Wolff-Ragnar ; Yu, Zhenrui ; Aceves-Mijares, Mariano ; Bian, Dongcai ; Du, Jinhui. / The deposition and control of self assembled silicon nano islands on crystalline silicon. In: International Journal of High Speed Electronics and Systems. 2008 ; Vol. 18, No. 4. pp. 901-910.
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title = "The deposition and control of self assembled silicon nano islands on crystalline silicon",
abstract = "The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO2 matrix and Si nano islands (Si nI) at c-Si/SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs. High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology. {\circledC} 2008 World Scientific Publishing Company.",
author = "Wolff-Ragnar Kiebach and Zhenrui Yu and Mariano Aceves-Mijares and Dongcai Bian and Jinhui Du",
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The deposition and control of self assembled silicon nano islands on crystalline silicon. / Kiebach, Wolff-Ragnar; Yu, Zhenrui; Aceves-Mijares, Mariano; Bian, Dongcai; Du, Jinhui.

In: International Journal of High Speed Electronics and Systems, Vol. 18, No. 4, 2008, p. 901-910.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - The deposition and control of self assembled silicon nano islands on crystalline silicon

AU - Kiebach, Wolff-Ragnar

AU - Yu, Zhenrui

AU - Aceves-Mijares, Mariano

AU - Bian, Dongcai

AU - Du, Jinhui

PY - 2008

Y1 - 2008

N2 - The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO2 matrix and Si nano islands (Si nI) at c-Si/SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs. High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology. © 2008 World Scientific Publishing Company.

AB - The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO2 matrix and Si nano islands (Si nI) at c-Si/SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs. High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology. © 2008 World Scientific Publishing Company.

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