The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

Hongyu Sun; Xiaohong Li; Yan Chen; Wei Li; Feng Li; Baoting Liu; Xiangyi Zhang

doi:10.1088/0957-4484/19/22/225601

The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

Hongyu Sun, Xiaohong Li, Yan Chen, Wei Li, Feng Li, Baoting Liu, Xiangyi Zhang

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm^-2 is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.

Original language	English
Article number	225601
Journal	Nanotechnology
Volume	19
Issue number	22
Number of pages	8
ISSN	0957-4484
DOIs	https://doi.org/10.1088/0957-4484/19/22/225601
Publication status	Published - 2008
Externally published	Yes

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T1 - The control of the growth orientations of electrodeposited single-crystal nanowire arrays

T2 - a case study for hexagonal CdS

AU - Sun, Hongyu

AU - Li, Xiaohong

AU - Chen, Yan

AU - Li, Wei

AU - Li, Feng

AU - Liu, Baoting

AU - Zhang, Xiangyi

PY - 2008

Y1 - 2008

N2 - The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm-2 is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.

AB - The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm-2 is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.

KW - T

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JO - Nanotechnology

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IS - 22

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The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

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