The conductivity of Bi(111) investigated with nanoscale four point probes

J.W. Wells, K. Handrup, J.F. Kallehauge, Lauge Gammelgaard, Peter Bøggild, Mette Bjerrum Balslev, J.E. Hansen, P.R.E. Petersen, P. Hofmann

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    The room temperature conductance of Bi(111) was measured using microscopic four point probes with a contact spacing down to 500 nm. The conductance is remarkably similar to that of the bulk, indicating that surface scattering is not a major mechanism for restricting the mobility at this length scale. Also, the high density of electronic surface states on Bi(111) does not appear to have a major influence on the measured conductance. The lower limit for the resistivity due to electronic surface states is found to be around 5 Omega. With such a value for the surface resistivity, surface conduction should not be a significant factor to inhibit the observation of the predicted semiconductor to semimetal transition for thin films of Bi. ©2008 American Institute of Physics
    Original languageEnglish
    JournalJournal of Applied Physics
    Issue number5
    Pages (from-to)053717
    Publication statusPublished - 2008

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    Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.


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