The room temperature conductance of Bi(111) was measured using microscopic four point probes with a contact spacing down to 500 nm. The conductance is remarkably similar to that of the bulk, indicating that surface scattering is not a major mechanism for restricting the mobility at this length scale. Also, the high density of electronic surface states on Bi(111) does not appear to have a major influence on the measured conductance. The lower limit for the resistivity due to electronic surface states is found to be around 5 Omega. With such a value for the surface resistivity, surface conduction should not be a significant factor to inhibit the observation of the predicted semiconductor to semimetal transition for thin films of Bi. ©2008 American Institute of Physics
Bibliographical noteCopyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Wells, J. W., Handrup, K., Kallehauge, J. F., Gammelgaard, L., Bøggild, P., Balslev, M. B., Hansen, J. E., Petersen, P. R. E., & Hofmann, P. (2008). The conductivity of Bi(111) investigated with nanoscale four point probes. Journal of Applied Physics, 104(5), 053717. https://doi.org/10.1063/1.2969769