The change of electric  field and of some other insulating properties  during isochronal annealing in thermally  poled Ge-doped silica films

Q.M. Liu; B. Poumellec; D. Braga; G. Blaise; Yitao Ren; Martin Kristensen

doi:10.1063/1.2053361

The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films

Q.M. Liu, B. Poumellec, D. Braga, G. Blaise, Yitao Ren, Martin Kristensen

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Abstract

The secondary electron emission contrast between poled and unpoled regions in thermally poled Ge-doped silica films were measured according to different annealing temperatures and electron doses with electron acceleration energy of 5 keV. It is used for measuring the change on annealing of poling induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows measuring properties of the electron traps. Their number appears to be modified in the poling process.

Original language	English
Article number	121906
Journal	Applied Physics Letters
Volume	87
Issue number	12
Pages (from-to)	1-3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2053361
Publication status	Published - 2005

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Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films",

abstract = "The secondary electron emission contrast between poled and unpoled regions in thermally poled Ge-doped silica films were measured according to different annealing temperatures and electron doses with electron acceleration energy of 5 keV. It is used for measuring the change on annealing of poling induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows measuring properties of the electron traps. Their number appears to be modified in the poling process.",

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T1 - The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films

AU - Liu, Q.M.

AU - Poumellec, B.

AU - Braga, D.

AU - Blaise, G.

AU - Ren, Yitao

AU - Kristensen, Martin

N1 - Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2005

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N2 - The secondary electron emission contrast between poled and unpoled regions in thermally poled Ge-doped silica films were measured according to different annealing temperatures and electron doses with electron acceleration energy of 5 keV. It is used for measuring the change on annealing of poling induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows measuring properties of the electron traps. Their number appears to be modified in the poling process.

AB - The secondary electron emission contrast between poled and unpoled regions in thermally poled Ge-doped silica films were measured according to different annealing temperatures and electron doses with electron acceleration energy of 5 keV. It is used for measuring the change on annealing of poling induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows measuring properties of the electron traps. Their number appears to be modified in the poling process.

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