The atomic structure of the Si(111) (2 root 3x2 root 3)R30 degrees-Sn reconstruction

A.H. Levermann, P.B. Howes, K.A. Edwards, H.T. Anyele, C.C. Matthai, J.E. Macdonald, R. Feidenhans'l, L. Lottermoser, L. Seehofer, G. Falkenberg, R.L. Johnson

    Research output: Contribution to journalJournal articleResearch

    Abstract

    We have studied the atomic structure of the (2 root 3x2 root)R30 degrees reconstruction induced by adsorption of about 1.1 monolayers of Sn on Si(lll) using surface X-ray diffraction (SXRD) and scanning tunnelling microscopy (STM). The experimentally obtained structure factors in SXRD are in contradiction with existing models in the literature and we conclude the need for a new surface atomic structure model. We have been able to determine a number of properties of an appropriate surface model to allow a better fit to the experimental structure factors.
    Original languageEnglish
    JournalApplied Surface Science
    Volume104
    Issue number124-129
    Pages (from-to)124-129
    ISSN0169-4332
    DOIs
    Publication statusPublished - 1996

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