Terahertz study of ultrafast carrier dynamics in InGa/GaN multiple quantum wells

Henrik Porte, Dmitry Turchinovich, David Cooke, Peter Uhd Jepsen

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.
Original languageEnglish
Article number012084
Book seriesJournal of Physics: Conference Series (Online)
Volume193
Pages (from-to)1
ISSN1742-6596
DOIs
Publication statusPublished - 2009
Event16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures - Montpellier, France
Duration: 24 Aug 200928 Aug 2009
Conference number: 16
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Conference

Conference16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures
Number16
CountryFrance
CityMontpellier
Period24/08/200928/08/2009
Internet address

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