Terahertz radiation from delta-doped GaAs

Dan Birkedal, Ole Hansen, Claus Birger Sørensen, K. Jarasiunas, S. D. Brorson, S. R. Keiding

    Research output: Contribution to journalJournal articleResearchpeer-review

    279 Downloads (Pure)

    Abstract

    Terahertz pulse emission from four different delta-doped molecular beam epitaxially grown GaAs samples is studied. We observe a decrease of the emitted THz pulse amplitude as the distance of the delta-doped layer from the surface is increased, and a change in polarity of the THz pulses as compared to bulk n-type doped GaAs reference samples. The electric fields in the region of the doping layer are investigated by photoreflectance spectroscopy. A careful analysis of Franz-Keldysh oscillations observed in the photoreflectance spectra provides information about the built-in fields on both sides of the delta-doped layer.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume65
    Issue number1
    Pages (from-to)79-81
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1994

    Bibliographical note

    Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

    Fingerprint

    Dive into the research topics of 'Terahertz radiation from delta-doped GaAs'. Together they form a unique fingerprint.

    Cite this