Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces.

C. Thirstrup, M. Sakurai, T. Nakayama, Kurt Stokbro

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    Abstract

    The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate (R) decreases several orders of magnitude when the substrate temperature is increased from 300 to 610 K. This is most noticeable at a bias voltage of -7 V where R decreases by a factor of 200 for a temperature change of 80 K, whilst it only decreases by a factor of 3 of at -5 V upon the same temperature chan ge. The experimental data can be explained by desorption due to vibrational heating by inelastic scattering via a hole resonance. This theory predicts a weak suppression of desorption with increasing temperature due to a decreasing vibrational lifetime, and a strong bias dependent suppression due to a temperature dependent lifetime of the hole resonance. (C) 1999 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    JournalSurface Science
    Volume424
    Issue number2-3
    Pages (from-to)L329-L334
    ISSN0039-6028
    DOIs
    Publication statusPublished - 1999

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