The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate (R) decreases several orders of magnitude when the substrate temperature is increased from 300 to 610 K. This is most noticeable at a bias voltage of -7 V where R decreases by a factor of 200 for a temperature change of 80 K, whilst it only decreases by a factor of 3 of at -5 V upon the same temperature chan ge. The experimental data can be explained by desorption due to vibrational heating by inelastic scattering via a hole resonance. This theory predicts a weak suppression of desorption with increasing temperature due to a decreasing vibrational lifetime, and a strong bias dependent suppression due to a temperature dependent lifetime of the hole resonance. (C) 1999 Elsevier Science B.V. All rights reserved.
Thirstrup, C., Sakurai, M., Nakayama, T., & Stokbro, K. (1999). Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces. Surface Science, 424(2-3), L329-L334. https://doi.org/10.1016/S0039-6028(99)00202-2