Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode

R. Stasch, R. Hey, M. Asche, Andreas Wacker, E. Schöll

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    Abstract

    Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n–-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime between 4.2 and 300 K in accordance with theoretical predictions. The delay and switching times of the transition from the low- to the high-conducting state are investigated as a function of the applied voltage and compared with simulations. The observed timescales are much longer than expected from theory, which indicates the presence of additional deep centers or interface states. ©1996 American Institute of Physics.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume80
    Issue number6
    Pages (from-to)3376-3380
    ISSN0021-8979
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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