TY - JOUR
T1 - Temperature Dependent Reversible p−n−p Type Conduction Switching with Colossal Change in Thermopower of Semiconducting AgCuS
AU - Guin, Satya N.
AU - Pan, Jaysree
AU - Bhowmik, Arghya
AU - Sanyal, Dirtha
AU - Waghmare, Umesh V.
AU - Biswas, Kanishka
PY - 2014
Y1 - 2014
N2 - Semiconductors have been fundamental to various devices that are
typically operated with electric field, such as transistors, memories, sensors, and
resistive switches. There is growing interest in the development of novel inorganic
materials for use in transistors and semiconductor switches, which can be operated
with a temperature gradient. Here, we show that a crystalline semiconducting noble
metal sulfide, AgCuS, exhibits a sharp temperature dependent reversible p−n−p type
conduction switching, along with a colossal change in the thermopower (ΔS of
∼1757 μV K−1) at the superionic phase transition (T of ∼364 K). In addition, its
thermal conductivity is ultralow in 300−550 K range giving AgCuS the ability to
maintain temperature gradients. We have developed fundamental understanding of
the phase transition and p−n−p type conduction switching in AgCuS through
temperature dependent synchrotron powder X-ray diffraction, heat capacity, Raman
spectroscopy, and positron annihilation spectroscopy measurements. Using first-principles calculations, we show that this rare
combination of properties originates from an effective decoupling of electrical conduction and phonon transport associated with
electronic states of the rigid sulfur sublattice and soft vibrations of the disordered cation sublattices, respectively. Temperature
dependent p−n−p type conduction switching makes AgCuS an ideal material for diode or transistor devices that operate
reversibly on temperature or voltage changes near room temperature.
AB - Semiconductors have been fundamental to various devices that are
typically operated with electric field, such as transistors, memories, sensors, and
resistive switches. There is growing interest in the development of novel inorganic
materials for use in transistors and semiconductor switches, which can be operated
with a temperature gradient. Here, we show that a crystalline semiconducting noble
metal sulfide, AgCuS, exhibits a sharp temperature dependent reversible p−n−p type
conduction switching, along with a colossal change in the thermopower (ΔS of
∼1757 μV K−1) at the superionic phase transition (T of ∼364 K). In addition, its
thermal conductivity is ultralow in 300−550 K range giving AgCuS the ability to
maintain temperature gradients. We have developed fundamental understanding of
the phase transition and p−n−p type conduction switching in AgCuS through
temperature dependent synchrotron powder X-ray diffraction, heat capacity, Raman
spectroscopy, and positron annihilation spectroscopy measurements. Using first-principles calculations, we show that this rare
combination of properties originates from an effective decoupling of electrical conduction and phonon transport associated with
electronic states of the rigid sulfur sublattice and soft vibrations of the disordered cation sublattices, respectively. Temperature
dependent p−n−p type conduction switching makes AgCuS an ideal material for diode or transistor devices that operate
reversibly on temperature or voltage changes near room temperature.
U2 - 10.1021/ja5059185
DO - 10.1021/ja5059185
M3 - Journal article
C2 - 25134826
SN - 0002-7863
VL - 136
SP - 12712−12720
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
ER -