Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition

T. Raadik, M. Grossberg, J. Krustok, M. Kauk-Kuusik, Andrea Crovetto, Rebecca Bolt Ettlinger, O. Hansen, Jørgen Schou

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Abstract

The energy band structure of Cu2SnS3 (CTS) thin films fabricated by pulsed laser deposition was studied by photoreflectance spectroscopy (PR). The temperature-dependent PR spectra were measured in the range of T = 10–150 K. According to the Raman scattering analysis, the monoclinic crystal structure (C1c1) prevails in the studied CTS thin film; however, a weak contribution from cubic CTS (F-43m) was also detected. The PR spectra revealed the valence band splitting of CTS. Optical transitions at EA = 0.92 eV, EB = 1.04 eV, and EC = 1.08 eV were found for monoclinic CTS at low-temperature (T = 10 K). Additional optical transition was detected at EAC = 0.94 eV, and it was attributed to the low-temperature band gap of cubic CTS. All the identified optical transition energies showed a blueshift with increasing temperature, and the temperature coefficient dE/dT was about 0.1 meV/K.
Original languageEnglish
Article number261105
JournalApplied Physics Letters
Volume110
Issue number26
Number of pages4
ISSN0003-6951
DOIs
Publication statusPublished - 2017

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