Temperature Dependence of the Polariton Linewidth in a GaAs Quantum Well Microcavity

P. Borri, Jacob Riis Jensen, W. Langbein, Jørn Märcher Hvam

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    The temperature dependent linewidths of the polariton resonances in a GaAs/AlGaAs single quantum well microcavity are measured. Due to the dominant homogeneous broadening of the investigated resonances, a direct linewidth analysis of the reflectivity spectra allows us to investigate the role of scattering mechanisms in the lower polariton branch compared to the middle and upper polaritons. We find that the lower polariton linewidth is smaller than the middle and upper polariton linewidths at all investigated temperatures from 11 to 100 K, in agreement with expectations in literature.
    Original languageEnglish
    JournalIPPS physica status solidi (b)
    Volume221
    Issue number1
    Pages (from-to)143-146
    ISSN0370-1972
    DOIs
    Publication statusPublished - 2000
    Event6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors - Marburg, Germany
    Duration: 10 Apr 200013 Apr 2000
    Conference number: 6

    Workshop

    Workshop6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors
    Number6
    Country/TerritoryGermany
    CityMarburg
    Period10/04/200013/04/2000

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