Temperature Dependence of the Polariton Linewidth in a GaAs Quantum Well Microcavity

P. Borri, Jacob Riis Jensen, W. Langbein, Jørn Märcher Hvam

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The temperature dependent linewidths of the polariton resonances in a GaAs/AlGaAs single quantum well microcavity are measured. Due to the dominant homogeneous broadening of the investigated resonances, a direct linewidth analysis of the reflectivity spectra allows us to investigate the role of scattering mechanisms in the lower polariton branch compared to the middle and upper polaritons. We find that the lower polariton linewidth is smaller than the middle and upper polariton linewidths at all investigated temperatures from 11 to 100 K, in agreement with expectations in literature.
Original languageEnglish
JournalIPPS physica status solidi (b)
Volume221
Issue number1
Pages (from-to)143-146
ISSN0370-1972
DOIs
Publication statusPublished - 2000
Event6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors - Marburg, Germany
Duration: 10 Apr 200013 Apr 2000
Conference number: 6

Workshop

Workshop6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors
Number6
Country/TerritoryGermany
CityMarburg
Period10/04/200013/04/2000

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