We analyzed the temperature-dependent variation of the peak energies in the photoluminescence of InAs/GaAs quantum dots and InAs/In0.2Ga0.8As/GaAs quantum dots in an asymmetric well. The InAs dots were grown by using migration-enhanced molecular beam epitaxy. The peak emission energies decreased monotonously with increasing temperature over the range of measurements from 13 K to 225 K. The temperature dependence of the peak energy was successfully fitted with two analytic models, namely, the phenomenological Varshni equation and the semi-empirical Fan equation based on electron-phonon statistics, respectively. The physical meaning of the Varshni coefficients is discussed in terms of the phonon energy and the strain in the nanostructures.
Kopylov, O., Lee, J., Han, I., Choi, W. J., Song, J. D., & Yeo, I. (2012). Temperature Dependence of the Excitonic Energy Band Gap in In(Ga)As Nanostructures. Journal of the Korean Physical Society, 60(10), 1828-1832. https://doi.org/10.3938/jkps.60.1828