Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

Zhangcheng Xu; K. Leosson; Dan Birkedal; J. Sadowski; Jørn Märcher Hvam

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

Zhangcheng Xu
, K. Leosson
, Dan Birkedal
, J. Sadowski
, Jørn Märcher Hvam

University of Copenhagen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states.

Original language	English
Title of host publication	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Number of pages	2
Publisher	Lund Univ
Publication date	2002
ISBN (Print)	1-0651688-9-2
Publication status	Published - 2002
Event	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science - Malmö, Sweden Duration: 24 Jun 2002 → 28 Jun 2002 https://www.sciencedirect.com/journal/surface-science/vol/532

Conference

Conference	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Country/Territory	Sweden
City	Malmö
Period	24/06/2002 → 28/06/2002
Internet address	https://www.sciencedirect.com/journal/surface-science/vol/532

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CD.Rom

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@inproceedings{062abf8ec23049f58d52fde8a33861e7,

title = "Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots",

abstract = "The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states.",

author = "Zhangcheng Xu and K. Leosson and Dan Birkedal and J. Sadowski and Hvam, \{J{\o}rn M{\"a}rcher\}",

note = "CD.Rom; 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science, NANO-7/ECOSS-21 ; Conference date: 24-06-2002 Through 28-06-2002",

year = "2002",

language = "English",

isbn = "1-0651688-9-2",

booktitle = "Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science",

publisher = "Lund Univ",

url = "https://www.sciencedirect.com/journal/surface-science/vol/532",

}

Xu, Z, Leosson, K, Birkedal, D, Sadowski, J & Hvam, JM 2002, Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots. in Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund Univ, 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science, Malmö, Sweden, 24/06/2002.

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots. / Xu, Zhangcheng; Leosson, K.; Birkedal, Dan et al.
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund Univ, 2002.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

AU - Xu, Zhangcheng

AU - Leosson, K.

AU - Birkedal, Dan

AU - Sadowski, J.

AU - Hvam, Jørn Märcher

N1 - CD.Rom

PY - 2002

Y1 - 2002

N2 - The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states.

AB - The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states.

M3 - Article in proceedings

SN - 1-0651688-9-2

BT - Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund Univ

T2 - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Y2 - 24 June 2002 through 28 June 2002

ER -

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

Abstract

Conference

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