Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

Zhangcheng Xu, K. Leosson, Dan Birkedal, J. Sadowski, Jørn Märcher Hvam

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Abstract

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states.
Original languageEnglish
Title of host publicationProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Number of pages2
PublisherLund Univ
Publication date2002
ISBN (Print)1-0651688-9-2
Publication statusPublished - 2002
Event7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science - Malmö, Sweden
Duration: 1 Jan 2002 → …

Conference

Conference7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
CityMalmö, Sweden
Period01/01/2002 → …

Bibliographical note

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Cite this

Xu, Z., Leosson, K., Birkedal, D., Sadowski, J., & Hvam, J. M. (2002). Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots. In Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science Lund Univ.