TY - JOUR
T1 - Temperature Dependence of Charge Localization in High-Mobility, Solution-Crystallized Small Molecule Semiconductors Studied by Charge Modulation Spectroscopy
AU - Meneau, Aurélie Y. B.
AU - Olivier, Yoann
AU - Backlund, Tomas
AU - James, Mark
AU - Breiby, Dag Werner
AU - Andreasen, Jens Wenzel
AU - Sirringhaus, Henning
PY - 2016
Y1 - 2016
N2 - In solution-processable small molecule semiconductors, the extent of charge
carrier wavefunction localization induced by dynamic disorder can be probed
spectroscopically as a function of temperature using charge modulation
spectroscopy (CMS). Here, it is shown based on combined fi eld-effect transistor
and CMS measurements as a function of temperature that in certain
molecular semiconductors, such as solution-processible pentacene, charge
carriers become trapped at low temperatures in environments in which the
charges become highly localized on individual molecules, while in some other
molecules the charge carrier wavefunction can retain a degree of delocalization
similar to what is present at room temperature. The experimental approach
sheds new insight into the nature of shallow charge traps in these materials
and allows identifying molecular systems in which intrinsic transport properties
could, in principle, be observed at low temperatures if other transport
bottlenecks associated with grain boundaries or contacts could be removed.
AB - In solution-processable small molecule semiconductors, the extent of charge
carrier wavefunction localization induced by dynamic disorder can be probed
spectroscopically as a function of temperature using charge modulation
spectroscopy (CMS). Here, it is shown based on combined fi eld-effect transistor
and CMS measurements as a function of temperature that in certain
molecular semiconductors, such as solution-processible pentacene, charge
carriers become trapped at low temperatures in environments in which the
charges become highly localized on individual molecules, while in some other
molecules the charge carrier wavefunction can retain a degree of delocalization
similar to what is present at room temperature. The experimental approach
sheds new insight into the nature of shallow charge traps in these materials
and allows identifying molecular systems in which intrinsic transport properties
could, in principle, be observed at low temperatures if other transport
bottlenecks associated with grain boundaries or contacts could be removed.
U2 - 10.1002/adfm.201502502
DO - 10.1002/adfm.201502502
M3 - Journal article
SN - 1616-301X
VL - 26
SP - 2326
EP - 2333
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -