Temperature coefficient of resistance and thermal boundary conductance determination of ruthenium thin films by micro four-point probe

Accurate characterization of the temperature coefficient of resistance (α_TCR) of electrically conductive materials is pertinent for reducing self-heating in electronic devices. In-situ non-destructive measurements of α_TCR using the micro four-point probe (M4PP) technique have previously been demonstrated on platinum (Pt) thin films deposited on fused silica, assuming the thermal conductivity of the substrate as known. In this study, we expand the M4PP method to obtain the α_TCR on industrially relevant stacks, comprising ruthenium (Ru) thin films (3.3 nm and 5.2 nm thick) deposited on bulk silicon (Si), separated by a 90 nm SiO₂ spacer. The new M4PP methodology allows simultaneous determination of both α_TCR and the total thermal boundary conductance (G_TBC) between the metallic film and its substrate. We measured the α_TCR and the G_TBC to be 542 ± 18 ppm K⁻¹ and 15.6 ± 1.3 MW m⁻²K⁻¹ for 3.3 nm Ru, and 982 ± 46 ppm K⁻¹ and 19.3 ± 2.3 MW m⁻²K⁻¹ for 5.2 nm Ru. This is in good agreement with independent measurements of α_TCR. Our methodology demonstrates the potential of M4PP to characterize thermal properties of metallic thin films used in semiconductor technology.