Tantalum coatings ranging from 0.5 to 120 mm has been deposited by CVD at 625-1000 C using tantalum pentachloride as precursor. Deposition rates range from 1 to 80mm/h and an activation energy of 103 kJ/mole is calculated. Well adhering deposits has been obtained on stainless steel, carbon steels, nickel, copper, titanium and aluminum. Calculation of the equilibrium composition of Ta-Cl-H-systems at 1000 K and 1100 K shows that TaCl4 and TaCl3 are stable at the deposition conditions and that a high yield (>90%) of tantalum is theoretically obtainable at low pressure (5 mbar) and moderate precursor concentration (1-2 mole%).
|Title of host publication||Meeting Abstracts, The 194 th Meeting of The Electrochemical Society|
|Place of Publication||Boston|
|Publisher||The Electrochemical Society|
|Publication status||Published - 1998|