Systematic study of shallow junction formation on germanium substrates

Geert Hellings; Erik Rosseel; Trudo Clarysse; Dirch Hjorth Petersen; Ole Hansen; Peter Folmer Nielsen; Eddy Simoen; Geert Eneman; Brice De Jaeger; Thomas Hoffmann; Kristin De Meyer; Wilfried Vandervorst

doi:10.1016/j.mee.2010.11.014

Systematic study of shallow junction formation on germanium substrates

Geert Hellings
, Erik Rosseel
, Trudo Clarysse
, Dirch Hjorth Petersen
, Ole Hansen
, Peter Folmer Nielsen
, Eddy Simoen
, Geert Eneman
, Brice De Jaeger
, Thomas Hoffmann
, Kristin De Meyer
, Wilfried Vandervorst

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.

Original language	English
Journal	Microelectronic Engineering
Volume	88
Issue number	4
Pages (from-to)	347-350
ISSN	0167-9317
DOIs	https://doi.org/10.1016/j.mee.2010.11.014
Publication status	Published - 2011
Event	Symposium H: “Post-Si-CMOS electronic devices: The role of Ge and III–V materials”: Part of E-MRS 2010 Spring Meeting - Strasbourg, France Duration: 7 Jun 2010 → 11 Jun 2010

Conference

Conference	Symposium H: “Post-Si-CMOS electronic devices: The role of Ge and III–V materials”
Country/Territory	France
City	Strasbourg
Period	07/06/2010 → 11/06/2010

Keywords

Ultra Shallow Junction
Arsenic
Mobility
Sheet Resistance
Germanium
Boron

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10.1016/j.mee.2010.11.014

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@inproceedings{2b24ebfa179b48cb95df345e1e585814,

title = "Systematic study of shallow junction formation on germanium substrates",

abstract = "Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.",

keywords = "Ultra Shallow Junction, Arsenic, Mobility, Sheet Resistance, Germanium, Boron",

author = "Geert Hellings and Erik Rosseel and Trudo Clarysse and Petersen, \{Dirch Hjorth\} and Ole Hansen and Nielsen, \{Peter Folmer\} and Eddy Simoen and Geert Eneman and \{De Jaeger\}, Brice and Thomas Hoffmann and \{De Meyer\}, Kristin and Wilfried Vandervorst",

year = "2011",

doi = "10.1016/j.mee.2010.11.014",

language = "English",

volume = "88",

pages = "347--350",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "4",

note = "Symposium H: “Post-Si-CMOS electronic devices: The role of Ge and III–V materials” : Part of E-MRS 2010 Spring Meeting ; Conference date: 07-06-2010 Through 11-06-2010",

}

TY - GEN

T1 - Systematic study of shallow junction formation on germanium substrates

AU - Hellings, Geert

AU - Rosseel, Erik

AU - Clarysse, Trudo

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Nielsen, Peter Folmer

AU - Simoen, Eddy

AU - Eneman, Geert

AU - De Jaeger, Brice

AU - Hoffmann, Thomas

AU - De Meyer, Kristin

AU - Vandervorst, Wilfried

PY - 2011

Y1 - 2011

N2 - Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.

AB - Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.

KW - Ultra Shallow Junction

KW - Arsenic

KW - Mobility

KW - Sheet Resistance

KW - Germanium

KW - Boron

U2 - 10.1016/j.mee.2010.11.014

DO - 10.1016/j.mee.2010.11.014

M3 - Conference article

SN - 0167-9317

VL - 88

SP - 347

EP - 350

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

T2 - Symposium H: “Post-Si-CMOS electronic devices: The role of Ge and III–V materials”

Y2 - 7 June 2010 through 11 June 2010

ER -

Systematic study of shallow junction formation on germanium substrates

Abstract

Conference

Keywords

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