Systematic study of shallow junction formation on germanium substrates

Geert Hellings, Erik Rosseel, Trudo Clarysse, Dirch Hjorth Petersen, Ole Hansen, Peter Folmer Nielsen, Eddy Simoen, Geert Eneman, Brice De Jaeger, Thomas Hoffmann, Kristin De Meyer, Wilfried Vandervorst

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.
    Original languageEnglish
    JournalMicroelectronic Engineering
    Volume88
    Issue number4
    Pages (from-to)347-350
    ISSN0167-9317
    DOIs
    Publication statusPublished - 2011
    EventPost-Si-CMOS electronic devices: the role of Ge and III-V materials -
    Duration: 1 Jan 2011 → …

    Conference

    ConferencePost-Si-CMOS electronic devices: the role of Ge and III-V materials
    Period01/01/2011 → …

    Keywords

    • Ultra Shallow Junction
    • Arsenic
    • Mobility
    • Sheet Resistance
    • Germanium
    • Boron

    Cite this

    Hellings, G., Rosseel, E., Clarysse, T., Petersen, D. H., Hansen, O., Nielsen, P. F., Simoen, E., Eneman, G., De Jaeger, B., Hoffmann, T., De Meyer, K., & Vandervorst, W. (2011). Systematic study of shallow junction formation on germanium substrates. Microelectronic Engineering, 88(4), 347-350. https://doi.org/10.1016/j.mee.2010.11.014