Abstract
This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific conditions the mode-locking operation can be temperature independent.
| Original language | English |
|---|---|
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 8634 |
| Pages (from-to) | 863407 |
| Number of pages | 8 |
| ISSN | 0277-786X |
| DOIs | |
| Publication status | Published - 2013 |
| Event | SPIE Photonics West OPTO 2013 - The Moscone Center, San Francisco, United States Duration: 2 Feb 2013 → 7 Feb 2013 http://spie.org/x90760.xml |
Conference
| Conference | SPIE Photonics West OPTO 2013 |
|---|---|
| Location | The Moscone Center |
| Country/Territory | United States |
| City | San Francisco |
| Period | 02/02/2013 → 07/02/2013 |
| Internet address |
Keywords
- Mode-locked fiber lasers
- Nanostructures
- Passive mode locking
- Semiconductor lasers
- Semiconductor quantum dots
- Temperature distribution
- Saturable absorbers