System Integration and Packaging of a Terahertz Photodetector at W-Band

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

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System Integration and Packaging of a Terahertz Photodetector at W-Band. / Dong, Yunfeng; Olvera, Anuar d. J. Fernandez; Morales, Alvaro; Aller, Mario Mendez; Preu, Sascha; Zhurbenko, Vitaliy; Hanberg, Peter J.; Okonkwo, Chigo; Tafur Monroy, Idelfonso ; Johansen, Tom Keinicke.

In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. PP, No. 99, 2019, p. 1-9.

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

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Dong, Yunfeng ; Olvera, Anuar d. J. Fernandez ; Morales, Alvaro ; Aller, Mario Mendez ; Preu, Sascha ; Zhurbenko, Vitaliy ; Hanberg, Peter J. ; Okonkwo, Chigo ; Tafur Monroy, Idelfonso ; Johansen, Tom Keinicke. / System Integration and Packaging of a Terahertz Photodetector at W-Band. In: IEEE Transactions on Components, Packaging and Manufacturing Technology. 2019 ; Vol. PP, No. 99. pp. 1-9.

Bibtex

@article{d0387110170b43bb80416929153f508c,
title = "System Integration and Packaging of a Terahertz Photodetector at W-Band",
abstract = "This paper presents the system integration and packaging of a photodetector at W-band (75-110 GHz) for terahertz (THz) communications. The ErAs:In(Al)GaAs photoconductor and its feeding network based on semi-insulating indium phosphide (InP) substrate are introduced. The design of the bias-tee at W-band is described and the effect of parasitic modes is discussed. Besides, the transition using E-plane probe between a W-band rectangular waveguide (WR-10) and a coplanar waveguide (CPW) is illustrated. The bias-tee as well as the E-plane probe transition are based on high-resistivity silicon (Si) substrate where wire bonding bridges are added on the top following the CPWs in order to restrict parasitic modes. The integration approach and the packaging structure are addressed. The proposed bias-tee and the E-plane probe transition including the WR-10 rectangular waveguide are fabricated, integrated, and measured. The measurement is carried out on-wafer in a back-to-back configuration and the results are presented. The assembly of the fully-packaged photodetector is demonstrated and a THz heterodyne communication system is implemented which validates the proposed system integration and packaging approach of the photodetector at W-band.",
keywords = "Bias-Tee, Coplanar waveguide (CPW), E-plane probe, Integration, Packaging, Photodetector, Terahertz (THz), Rectangular waveguide, Wire bonding",
author = "Yunfeng Dong and Olvera, {Anuar d. J. Fernandez} and Alvaro Morales and Aller, {Mario Mendez} and Sascha Preu and Vitaliy Zhurbenko and Hanberg, {Peter J.} and Chigo Okonkwo and {Tafur Monroy}, Idelfonso and Johansen, {Tom Keinicke}",
year = "2019",
doi = "10.1109/TCPMT.2019.2928053",
language = "English",
volume = "PP",
pages = "1--9",
journal = "I E E E Transactions on Components, Packaging and Manufacturing Technology",
issn = "2156-3950",
publisher = "Institute of Electrical and Electronics Engineers",
number = "99",

}

RIS

TY - JOUR

T1 - System Integration and Packaging of a Terahertz Photodetector at W-Band

AU - Dong, Yunfeng

AU - Olvera, Anuar d. J. Fernandez

AU - Morales, Alvaro

AU - Aller, Mario Mendez

AU - Preu, Sascha

AU - Zhurbenko, Vitaliy

AU - Hanberg, Peter J.

AU - Okonkwo, Chigo

AU - Tafur Monroy, Idelfonso

AU - Johansen, Tom Keinicke

PY - 2019

Y1 - 2019

N2 - This paper presents the system integration and packaging of a photodetector at W-band (75-110 GHz) for terahertz (THz) communications. The ErAs:In(Al)GaAs photoconductor and its feeding network based on semi-insulating indium phosphide (InP) substrate are introduced. The design of the bias-tee at W-band is described and the effect of parasitic modes is discussed. Besides, the transition using E-plane probe between a W-band rectangular waveguide (WR-10) and a coplanar waveguide (CPW) is illustrated. The bias-tee as well as the E-plane probe transition are based on high-resistivity silicon (Si) substrate where wire bonding bridges are added on the top following the CPWs in order to restrict parasitic modes. The integration approach and the packaging structure are addressed. The proposed bias-tee and the E-plane probe transition including the WR-10 rectangular waveguide are fabricated, integrated, and measured. The measurement is carried out on-wafer in a back-to-back configuration and the results are presented. The assembly of the fully-packaged photodetector is demonstrated and a THz heterodyne communication system is implemented which validates the proposed system integration and packaging approach of the photodetector at W-band.

AB - This paper presents the system integration and packaging of a photodetector at W-band (75-110 GHz) for terahertz (THz) communications. The ErAs:In(Al)GaAs photoconductor and its feeding network based on semi-insulating indium phosphide (InP) substrate are introduced. The design of the bias-tee at W-band is described and the effect of parasitic modes is discussed. Besides, the transition using E-plane probe between a W-band rectangular waveguide (WR-10) and a coplanar waveguide (CPW) is illustrated. The bias-tee as well as the E-plane probe transition are based on high-resistivity silicon (Si) substrate where wire bonding bridges are added on the top following the CPWs in order to restrict parasitic modes. The integration approach and the packaging structure are addressed. The proposed bias-tee and the E-plane probe transition including the WR-10 rectangular waveguide are fabricated, integrated, and measured. The measurement is carried out on-wafer in a back-to-back configuration and the results are presented. The assembly of the fully-packaged photodetector is demonstrated and a THz heterodyne communication system is implemented which validates the proposed system integration and packaging approach of the photodetector at W-band.

KW - Bias-Tee

KW - Coplanar waveguide (CPW)

KW - E-plane probe

KW - Integration

KW - Packaging

KW - Photodetector

KW - Terahertz (THz)

KW - Rectangular waveguide

KW - Wire bonding

U2 - 10.1109/TCPMT.2019.2928053

DO - 10.1109/TCPMT.2019.2928053

M3 - Journal article

VL - PP

SP - 1

EP - 9

JO - I E E E Transactions on Components, Packaging and Manufacturing Technology

JF - I E E E Transactions on Components, Packaging and Manufacturing Technology

SN - 2156-3950

IS - 99

ER -