System Integration and Packaging of a Terahertz Photodetector at W-Band

Yunfeng Dong*, Anuar d. J. Fernandez Olvera, Alvaro Morales, Mario Mendez Aller, Sascha Preu, Vitaliy Zhurbenko, Peter J. Hanberg, Chigo Okonkwo, Idelfonso Tafur Monroy, Tom Keinicke Johansen

*Corresponding author for this work

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This paper presents the system integration and packaging of a photodetector at W-band (75-110 GHz) for terahertz (THz) communications. The ErAs:In(Al)GaAs photoconductor and its feeding network based on semi-insulating indium phosphide (InP) substrate are introduced. The design of the bias-tee at W-band is described and the effect of parasitic modes is discussed. Besides, the transition using E-plane probe between a W-band rectangular waveguide (WR-10) and a coplanar waveguide (CPW) is illustrated. The bias-tee as well as the E-plane probe transition are based on high-resistivity silicon (Si) substrate where wire bonding bridges are added on the top following the CPWs in order to restrict parasitic modes. The integration approach and the packaging structure are addressed. The proposed bias-tee and the E-plane probe transition including the WR-10 rectangular waveguide are fabricated, integrated, and measured. The measurement is carried out on-wafer in a back-to-back configuration and the results are presented. The assembly of the fully-packaged photodetector is demonstrated and a THz heterodyne communication system is implemented which validates the proposed system integration and packaging approach of the photodetector at W-band.
Original languageEnglish
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Issue number8
Pages (from-to)1486-1494
Number of pages9
Publication statusPublished - 2019


  • Bias-Tee
  • Coplanar waveguide (CPW)
  • E-plane probe
  • Integration
  • Packaging
  • Photodetector
  • Terahertz (THz)
  • Rectangular waveguide
  • Wire bonding


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