Synthesis of Thin Cr3Se4 Films from Modulated Elemental Reactants via Two Amorphous Intermediates: A Detailed Examination of the Reaction Mechanism

M Behrens, Wolff-Ragnar Kiebach, W Bensch, D Haussler, W Jager

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The reaction of Cr/Se multilayers when they are annealed occurs in two steps:  interdiffusion of the single layers to an amorphous Cr−Se alloy and crystallization of Cr3Se4. Both reaction steps were characterized using various techniques. At approximately 300 °C the layers have interdiffused completely to form a homogeneous amorphous Cr−Se alloy. Short-range order in the alloy was probed with X-ray absorption spectroscopy (XAS) and, according to the results of this, is already very similar to Cr3Se4, which crystallizes around 500 °C. Crystallization occurs at a well-defined temperature, whereas crystallite growth proceeds in the whole temperature interval above the crystallization temperature and is not finished at 660 °C. The reaction yields a polycrystalline thin film of Cr3Se4 in a preferred orientation exhibiting a (00l) texture. In Cr-rich samples amorphous Cr is present as a by-product. A Cr−Se/Se multilayer was observed as an intermediate in the interdiffusion of some Cr-rich samples which is stable between 200 and 250 °C.
Original languageEnglish
JournalInorganic Chemistry
Volume45
Issue number6
Pages (from-to)2704
ISSN0020-1669
DOIs
Publication statusPublished - 2006
Externally publishedYes

Cite this

@article{e4c45302ad7847f0a8a2441365157f3f,
title = "Synthesis of Thin Cr3Se4 Films from Modulated Elemental Reactants via Two Amorphous Intermediates: A Detailed Examination of the Reaction Mechanism",
abstract = "The reaction of Cr/Se multilayers when they are annealed occurs in two steps:  interdiffusion of the single layers to an amorphous Cr−Se alloy and crystallization of Cr3Se4. Both reaction steps were characterized using various techniques. At approximately 300 °C the layers have interdiffused completely to form a homogeneous amorphous Cr−Se alloy. Short-range order in the alloy was probed with X-ray absorption spectroscopy (XAS) and, according to the results of this, is already very similar to Cr3Se4, which crystallizes around 500 °C. Crystallization occurs at a well-defined temperature, whereas crystallite growth proceeds in the whole temperature interval above the crystallization temperature and is not finished at 660 °C. The reaction yields a polycrystalline thin film of Cr3Se4 in a preferred orientation exhibiting a (00l) texture. In Cr-rich samples amorphous Cr is present as a by-product. A Cr−Se/Se multilayer was observed as an intermediate in the interdiffusion of some Cr-rich samples which is stable between 200 and 250 °C.",
author = "M Behrens and Wolff-Ragnar Kiebach and W Bensch and D Haussler and W Jager",
year = "2006",
doi = "10.1021/ic0515204",
language = "English",
volume = "45",
pages = "2704",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "6",

}

Synthesis of Thin Cr3Se4 Films from Modulated Elemental Reactants via Two Amorphous Intermediates: A Detailed Examination of the Reaction Mechanism. / Behrens, M; Kiebach, Wolff-Ragnar; Bensch, W; Haussler, D; Jager, W.

In: Inorganic Chemistry, Vol. 45, No. 6, 2006, p. 2704.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Synthesis of Thin Cr3Se4 Films from Modulated Elemental Reactants via Two Amorphous Intermediates: A Detailed Examination of the Reaction Mechanism

AU - Behrens, M

AU - Kiebach, Wolff-Ragnar

AU - Bensch, W

AU - Haussler, D

AU - Jager, W

PY - 2006

Y1 - 2006

N2 - The reaction of Cr/Se multilayers when they are annealed occurs in two steps:  interdiffusion of the single layers to an amorphous Cr−Se alloy and crystallization of Cr3Se4. Both reaction steps were characterized using various techniques. At approximately 300 °C the layers have interdiffused completely to form a homogeneous amorphous Cr−Se alloy. Short-range order in the alloy was probed with X-ray absorption spectroscopy (XAS) and, according to the results of this, is already very similar to Cr3Se4, which crystallizes around 500 °C. Crystallization occurs at a well-defined temperature, whereas crystallite growth proceeds in the whole temperature interval above the crystallization temperature and is not finished at 660 °C. The reaction yields a polycrystalline thin film of Cr3Se4 in a preferred orientation exhibiting a (00l) texture. In Cr-rich samples amorphous Cr is present as a by-product. A Cr−Se/Se multilayer was observed as an intermediate in the interdiffusion of some Cr-rich samples which is stable between 200 and 250 °C.

AB - The reaction of Cr/Se multilayers when they are annealed occurs in two steps:  interdiffusion of the single layers to an amorphous Cr−Se alloy and crystallization of Cr3Se4. Both reaction steps were characterized using various techniques. At approximately 300 °C the layers have interdiffused completely to form a homogeneous amorphous Cr−Se alloy. Short-range order in the alloy was probed with X-ray absorption spectroscopy (XAS) and, according to the results of this, is already very similar to Cr3Se4, which crystallizes around 500 °C. Crystallization occurs at a well-defined temperature, whereas crystallite growth proceeds in the whole temperature interval above the crystallization temperature and is not finished at 660 °C. The reaction yields a polycrystalline thin film of Cr3Se4 in a preferred orientation exhibiting a (00l) texture. In Cr-rich samples amorphous Cr is present as a by-product. A Cr−Se/Se multilayer was observed as an intermediate in the interdiffusion of some Cr-rich samples which is stable between 200 and 250 °C.

U2 - 10.1021/ic0515204

DO - 10.1021/ic0515204

M3 - Journal article

VL - 45

SP - 2704

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 6

ER -