Abstract
The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can be controlled in the range of 3-6 nm by variation of the annealing parameters. Using a combination of transmission electron microscopy and Raman-scattering spectroscopy, the nanoclusters were shown to be crystalline. However, photoluminescence measurements showed no light emission that could be definitively correlated to the presence of the nanoclusters.
| Original language | English |
|---|---|
| Journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING |
| Volume | 81 |
| Issue number | 8 |
| Pages (from-to) | 1591-1593 |
| ISSN | 0947-8396 |
| Publication status | Published - 2005 |