Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

T.P. Leervad Pedersen, J. Skov Jensen, J. Chevallier, J. M. Jensen, Ole Hansen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can be controlled in the range of 3-6 nm by variation of the annealing parameters. Using a combination of transmission electron microscopy and Raman-scattering spectroscopy, the nanoclusters were shown to be crystalline. However, photoluminescence measurements showed no light emission that could be definitively correlated to the presence of the nanoclusters.
Original languageEnglish
JournalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume81
Issue number8
Pages (from-to)1591-1593
ISSN0947-8396
Publication statusPublished - 2005

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