Synthesis and morphology transformation of single-crystal graphene domains based on activated carbon dioxide by chemical vapor deposition

Uniform single-crystal graphene domains were synthesized on copper foils by atmospheric pressure chemical vapor deposition with activated carbon dioxide (CO2). Controlled growth of graphene domains with a shape evolution from hexagonal to round has been achieved by varying the flow rate of CO2. The excess CO2 passivation induced graphene domain morphology transformation was systematically studied. Field-effect transistors were fabricated based on our CO2-derived graphene and their electrical properties were measured both in air and N2. The maximum fitted device mobilities for holes and electrons could achieve up to 3010 and 750 cm2 V1 s1, respectively. Our method provides a viable way for the industrial application of graphene derived from CO2 which could be converted to carbon materials.