Switching Transient Analysis and Characterization of GaN HEMT

Bainan Sun, Zhe Zhang, Michael A. E. Andersen

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    Abstract

    High electron mobility transistor (HEMT) has the advantage of fast switching capability, low power loss and small package design. Gallium Nitride (GaN) HEMT is widely researched in recent years. Accurate characterization and detailed switching analysis are critical for the practical application in power converters. In this paper, a 650V GaN HEMT is tested based on the double pulse tester. Based on the experimental results, the switching transient analysis is given and the phenomenon of Miller plateau shifting is explained. Switching time and switching loss characterization are given as the reference value for converter design.
    Original languageEnglish
    Title of host publicationProceedings of 3rd International Conference on Intelligent Green Building and Smart Grid
    Number of pages4
    PublisherIEEE
    Publication date2018
    Publication statusPublished - 2018
    Event2018 IEEE International Conference on Intelligent Green Building and Smart Grid - National Ilan University, Yilan, Taiwan, Province of China
    Duration: 22 Apr 201825 Apr 2018
    Conference number: 3
    http://igbsg.ntust.edu.tw/#
    http://igbsg.ntust.edu.tw/index.php

    Conference

    Conference2018 IEEE International Conference on Intelligent Green Building and Smart Grid
    Number3
    LocationNational Ilan University
    Country/TerritoryTaiwan, Province of China
    CityYilan
    Period22/04/201825/04/2018
    Internet address

    Keywords

    • Double pulse test
    • GaN HEMT
    • Miller plateau
    • Switching characterization

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