High electron mobility transistor (HEMT) has the advantage of fast switching capability, low power loss and small package design. Gallium Nitride (GaN) HEMT is widely researched in recent years. Accurate characterization and detailed switching analysis are critical for the practical application in power converters. In this paper, a 650V GaN HEMT is tested based on the double pulse tester. Based on the experimental results, the switching transient analysis is given and the phenomenon of Miller plateau shifting is explained. Switching time and switching loss characterization are given as the reference value for converter design.
|Title of host publication||Proceedings of 3rd International Conference on Intelligent Green Building and Smart Grid|
|Number of pages||4|
|Publication status||Published - 2018|
|Event||3rd International Conference on Intelligent Green Building and Smart Grid - National Ilan University, Yilan, Taiwan, Province of China|
Duration: 22 Apr 2018 → 25 Apr 2018
|Conference||3rd International Conference on Intelligent Green Building and Smart Grid|
|Location||National Ilan University|
|Country||Taiwan, Province of China|
|Period||22/04/2018 → 25/04/2018|
- Double pulse test
- GaN HEMT
- Miller plateau
- Switching characterization
Sun, B., Zhang, Z., & Andersen, M. A. E. (2018). Switching Transient Analysis and Characterization of GaN HEMT. In Proceedings of 3rd International Conference on Intelligent Green Building and Smart Grid IEEE.