Switching Transient Analysis and Characterization of GaN HEMT

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Abstract

High electron mobility transistor (HEMT) has the advantage of fast switching capability, low power loss and small package design. Gallium Nitride (GaN) HEMT is widely researched in recent years. Accurate characterization and detailed switching analysis are critical for the practical application in power converters. In this paper, a 650V GaN HEMT is tested based on the double pulse tester. Based on the experimental results, the switching transient analysis is given and the phenomenon of Miller plateau shifting is explained. Switching time and switching loss characterization are given as the reference value for converter design.
Original languageEnglish
Title of host publicationProceedings of 3rd International Conference on Intelligent Green Building and Smart Grid
Number of pages4
PublisherIEEE
Publication date2018
Publication statusPublished - 2018
Event3rd International Conference on Intelligent Green Building and Smart Grid - National Ilan University, Yilan, Taiwan, Province of China
Duration: 22 Apr 201825 Apr 2018
http://igbsg.ntust.edu.tw/index.php

Conference

Conference3rd International Conference on Intelligent Green Building and Smart Grid
LocationNational Ilan University
CountryTaiwan, Province of China
CityYilan
Period22/04/201825/04/2018
Internet address

Keywords

  • Double pulse test
  • GaN HEMT
  • Miller plateau
  • Switching characterization

Cite this

Sun, B., Zhang, Z., & Andersen, M. A. E. (2018). Switching Transient Analysis and Characterization of GaN HEMT. In Proceedings of 3rd International Conference on Intelligent Green Building and Smart Grid IEEE.