Switching Performance in a GaN Power Stage at Extreme Temperature Conditions

Keyphrases

• Power Stage 100%
• Switching Performance 100%
• Gallium Nitride 100%
• Extreme Temperature Conditions 100%
• High Temperature 66%
• Loss Reduction 66%
• Output Capacitance 66%
• Transient Response 33%
• Ambient Temperature 33%
• Room Temperature 33%
• Mode Switch 33%
• Loss Mechanism 33%
• Field-effect Transistors 33%
• Timing Optimization 33%
• Switching Nodes 33%
• Switching Losses 33%
• Half-bridge 33%
• Gallium Nitride Device 33%

Engineering

• Power Stage 100%
• Temperature Condition 100%
• Nitride 100%
• Loss Reduction 66%
• Transient Analysis 33%
• Field-Effect Transistor 33%
• Switching Loss 33%
• Dead Time 33%
• Nodes 33%
• Room Temperature 33%

Material Science

• Gallium Nitride 100%
• Capacitance 66%
• Field Effect Transistors 33%