Abstract
Exposure to an extreme ambient temperature leads to increased losses in a Gallium Nitride Field Effect Transistor (GaN-FET) when operating in a switch-mode power stage. The output capacitance of Gallium Nitride (GaN) devices is decreased at higher voltages but increased at higher temperatures. This
paper highlights the effect of output capacitance in a half-bridge switching stage and offers analysis towards the switching losses. A power stage was built and tested with two timing optimizations: for room temperature and high temperature, respectively. Trading off dead time and the loss mechanisms involved, a loss reduction of 16.1% was achieved. This loss reduction was further improved to 26.1% after thorough investigation of the switch node transient responses.
paper highlights the effect of output capacitance in a half-bridge switching stage and offers analysis towards the switching losses. A power stage was built and tested with two timing optimizations: for room temperature and high temperature, respectively. Trading off dead time and the loss mechanisms involved, a loss reduction of 16.1% was achieved. This loss reduction was further improved to 26.1% after thorough investigation of the switch node transient responses.
Original language | English |
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Title of host publication | Proceedings of 8th IEEE Workshop on Wide Bandgap Power Devices and Applications |
Publisher | IEEE |
Publication date | 2021 |
Pages | 135-139 |
ISBN (Print) | 978-1-6654-0182-1 |
DOIs | |
Publication status | Published - 2021 |
Event | 8th IEEE Workshop on Wide Bandgap Power Devices and Applications - Virtual event Duration: 7 Nov 2021 → 11 Nov 2021 https://wipda.org/ |
Conference
Conference | 8th IEEE Workshop on Wide Bandgap Power Devices and Applications |
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Location | Virtual event |
Period | 07/11/2021 → 11/11/2021 |
Internet address |
Keywords
- GaN-FET
- Switching losses