Switching Performance in a GaN Power Stage at Extreme Temperature Conditions

Martijn Sebastiaan Duraij, Yudi Xiao, Tiberiu Gabriel Zsurzsan, Zhe Zhang

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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    Abstract

    Exposure to an extreme ambient temperature leads to increased losses in a Gallium Nitride Field Effect Transistor (GaN-FET) when operating in a switch-mode power stage. The output capacitance of Gallium Nitride (GaN) devices is decreased at higher voltages but increased at higher temperatures. This
    paper highlights the effect of output capacitance in a half-bridge switching stage and offers analysis towards the switching losses. A power stage was built and tested with two timing optimizations: for room temperature and high temperature, respectively. Trading off dead time and the loss mechanisms involved, a loss reduction of 16.1% was achieved. This loss reduction was further improved to 26.1% after thorough investigation of the switch node transient responses.
    Original languageEnglish
    Title of host publicationProceedings of 8th IEEE Workshop on Wide Bandgap Power Devices and Applications
    PublisherIEEE
    Publication date2021
    Pages135-139
    ISBN (Print)978-1-6654-0182-1
    DOIs
    Publication statusPublished - 2021
    Event8th IEEE Workshop on Wide Bandgap Power Devices and Applications - Virtual event
    Duration: 7 Nov 202111 Nov 2021
    https://wipda.org/

    Conference

    Conference8th IEEE Workshop on Wide Bandgap Power Devices and Applications
    LocationVirtual event
    Period07/11/202111/11/2021
    Internet address

    Keywords

    • GaN-FET
    • Switching losses

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