Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

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Abstract

Silicon Carbide (SiC) power devices can provide a significant improvement of power density and efficiency in power converters. The switching performances of SiC power devices are often a trade-off between the gate driver complexity and the desired performance; this is especially true for SiC BJTs and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations on the gate driver complexity and cost.
Original languageEnglish
Title of host publicationProceedings of ECCE Asia DownUnder 2013
PublisherIEEE
Publication date2013
Pages233-239
ISBN (Print)978-1-4799-0482-2
Publication statusPublished - 2013
EventECCE Asia DownUnder 2013 : 5th Annual International Energy Conversion Congress and Exhibition - Crown Convention Centre, Melbourne, Australia
Duration: 3 Jun 20136 Jun 2013

Conference

ConferenceECCE Asia DownUnder 2013
LocationCrown Convention Centre
CountryAustralia
CityMelbourne
Period03/06/201306/06/2013

Keywords

  • Silicon Carbide (SiC)
  • SiC JFET
  • SiC MOSFET
  • Gate Driver
  • Switching losses

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