Switching Investigations on a SiC MOSFET in a TO-247 Package

Alexander Anthon, Juan Carlos Hernandez Botella, Zhe Zhang, Michael A. E. Andersen

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Abstract

This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97.7 % is reached
Original languageEnglish
Title of host publicationProceedings of IECON 2014
PublisherIEEE
Publication date2014
Pages1854-1860
ISBN (Print)978-1-4799-4033-2
DOIs
Publication statusPublished - 2014
Event40th Annual Conference of IEEE Industrial Electronics Society - Sheraton Hotel Dallas, Dallas, TX, United States
Duration: 29 Oct 20141 Nov 2014

Conference

Conference40th Annual Conference of IEEE Industrial Electronics Society
LocationSheraton Hotel Dallas
CountryUnited States
CityDallas, TX
Period29/10/201401/11/2014

Keywords

  • SiC MOSFET
  • IGBT
  • Multilevel inverter
  • Switching Energy

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