Abstract
This paper deals with the switching behavior of
a SiC MOSFET in a TO-247 package. Based on simulations,
critical parasitic inductances in the circuit layout are analyzed
and their effect on the switching losses highlighted. Especially
the common source inductance, a critical parameter in a TO-247
package, has a major influence on the switching energy. Crucial
design guidelines for an improved double pulse test circuit
are introduced which are used for practical investigations on
the switching behavior. Switching energies of a SiC MOSFET
in a TO-247 package is measured depending on varying gate
resistance and loop inductances. With total switching energy of
340.24 μJ, the SiC MOSFET has more than six times lower
switching losses than a regular Si IGBT. Implementing the
SiC switches in a 3 kW T-Type inverter topology, efficiency
improvements of 0.8 % are achieved and maximum efficiency
of 97.7 % is reached
| Original language | English |
|---|---|
| Title of host publication | Proceedings of IECON 2014 |
| Publisher | IEEE |
| Publication date | 2014 |
| Pages | 1854-1860 |
| ISBN (Print) | 978-1-4799-4033-2 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 40th Annual Conference of IEEE Industrial Electronics Society - Sheraton Hotel Dallas, Dallas, United States Duration: 29 Oct 2014 → 1 Nov 2014 Conference number: 40 https://ieeexplore.ieee.org/xpl/conhome/7036020/proceeding |
Conference
| Conference | 40th Annual Conference of IEEE Industrial Electronics Society |
|---|---|
| Number | 40 |
| Location | Sheraton Hotel Dallas |
| Country/Territory | United States |
| City | Dallas |
| Period | 29/10/2014 → 01/11/2014 |
| Internet address |
Keywords
- SiC MOSFET
- IGBT
- Multilevel inverter
- Switching Energy