Surface Plasmons on Highly Doped InP

Mohammad Esmail Aryaee Panah, Luisa Ottaviano, Elizaveta Semenova, Andrei Lavrinenko

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function. The derived dielectric function is used to simulate the excitation of surface plasmons by a diffraction grating made of the grown material. The grating structure is fabricated using standard nanofabrication techniques. Spectral features from the grating agree well with the simulations and show spp coupling at predicted angles of incidence and wavelengths.
Original languageEnglish
Title of host publicationProceedings of 10th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics
PublisherIEEE
Publication date2016
Pages28-30
ISBN (Print)9781509018031
DOIs
Publication statusPublished - 2016
Event10th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics - Crete, Greece
Duration: 17 Sep 201622 Sep 2016
Conference number: 10

Conference

Conference10th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics
Number10
CountryGreece
CityCrete
Period17/09/201622/09/2016

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