Surface investigation of ion dose non-uniformity due to modal and discrete focusing effects during PIII of silicon

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

Original language	English
Title of host publication	Proceedings of the 6th International Conference on Reactive Plasmas (ICRP)
Number of pages	2
Publication date	2006
Pages	417-418
Publication status	Published - 2006
Externally published	Yes
Event	6th International Conference on Reactive Plasmas - Hotel Taikanso, Sendai, Japan Duration: 24 Jan 2006 → 27 Jan 2006

Conference	6th International Conference on Reactive Plasmas
Location	Hotel Taikanso
Country/Territory	Japan
City	Sendai
Period	24/01/2006 → 27/01/2006

OpenUrl availability

@inbook{2670557a3a894cd28080fff94f7e3750,

title = "Surface investigation of ion dose non-uniformity due to modal and discrete focusing effects during PIII of silicon",

author = "N. Holtzer and Eugen Stamate and H. Sugai",

year = "2006",

language = "English",

pages = "417--418",

booktitle = "Proceedings of the 6th International Conference on Reactive Plasmas (ICRP)",

note = "6th International Conference on Reactive Plasmas, IRCP 6 ; Conference date: 24-01-2006 Through 27-01-2006",

}

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

TY - ABST

T1 - Surface investigation of ion dose non-uniformity due to modal and discrete focusing effects during PIII of silicon

AU - Holtzer, N.

AU - Stamate, Eugen

AU - Sugai, H.

PY - 2006

Y1 - 2006

M3 - Conference abstract in proceedings

SP - 417

EP - 418

BT - Proceedings of the 6th International Conference on Reactive Plasmas (ICRP)

T2 - 6th International Conference on Reactive Plasmas

Y2 - 24 January 2006 through 27 January 2006

ER -