Abstract
An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP
and AlGaInAs asymmetric barrier layers (ABLs) and its light–current
characteristic (LCC) is compared with that of a reference conventional
QW laser without ABLs. It was found that the use of the ABLs
suppresses the sublinearity of the LCC at high current densities. As a
result, the maximum lasing power of 9.2 W, being limited by catastrophic
optical mirror damage, is achieved at a considerably lower operating
current in the laser with ABLs as compared to the reference laser
(12.5 against 20.2 A). The ABL effect is associated with the suppression
of the parasitic recombination in the optical confinement layer, as con-
firmed by a decrease of the intensity of the spontaneous emission from
the layer.
Original language | English |
---|---|
Journal | Electronics Letters |
Volume | 51 |
Issue number | 14 |
Pages (from-to) | 1106–1108 |
ISSN | 0013-5194 |
Publication status | Published - 2015 |