Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

Rafael Jozef Taboryski, Thomas Clausen, jonatan Kutchinsky, Claus B. Sørensen, Poul Erik Lindelof, Jørn Bindslev Hansen, Claus Schelde Jacobsen

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Abstract

We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm interface was compensated by inserting several Si δ-doped layers above the conduction layer and close to the surface of the GaAs heterostructure. Below 1.2 K, the transition temperature of Al, the dc I-V curves of such S-Sm-S junctions with a wide and short GaAs channel exhibited the classic features of S-N-S junctions including subharmonic energy gap structure (SGS) and excess current (EC) due to Andreev reflections at the interfaces
Original languageEnglish
JournalI E E E Transactions on Applied Superconductivity
Volume7
Issue number2
Pages (from-to)2809-2812
ISSN1051-8223
DOIs
Publication statusPublished - 1997
EventApplied Superconductivity 96 - Pittsburgh, Pennsylvania
Duration: 1 Jan 1996 → …

Conference

ConferenceApplied Superconductivity 96
CityPittsburgh, Pennsylvania
Period01/01/1996 → …

Bibliographical note

Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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