Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

Rafael Jozef Taboryski, Thomas Clausen, jonatan Kutchinsky, Claus B. Sørensen, Poul Erik Lindelof, Jørn Bindslev Hansen, Claus Schelde Jacobsen

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We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm interface was compensated by inserting several Si δ-doped layers above the conduction layer and close to the surface of the GaAs heterostructure. Below 1.2 K, the transition temperature of Al, the dc I-V curves of such S-Sm-S junctions with a wide and short GaAs channel exhibited the classic features of S-N-S junctions including subharmonic energy gap structure (SGS) and excess current (EC) due to Andreev reflections at the interfaces
Original languageEnglish
JournalI E E E Transactions on Applied Superconductivity
Issue number2
Pages (from-to)2809-2812
Publication statusPublished - 1997
EventApplied Superconductivity 96 - Pittsburgh, Pennsylvania
Duration: 1 Jan 1996 → …


ConferenceApplied Superconductivity 96
CityPittsburgh, Pennsylvania
Period01/01/1996 → …

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