Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

Rafael Jozef Taboryski; Thomas Clausen; jonatan Kutchinsky; Claus B. Sørensen; Poul Erik Lindelof; Jørn Bindslev Hansen; Claus Schelde Jacobsen

doi:10.1109/77.621821

Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

Rafael Jozef Taboryski, Thomas Clausen, jonatan Kutchinsky, Claus B. Sørensen, Poul Erik Lindelof, Jørn Bindslev Hansen, Claus Schelde Jacobsen

Department of Physics

University of Copenhagen

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Abstract

We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm interface was compensated by inserting several Si δ-doped layers above the conduction layer and close to the surface of the GaAs heterostructure. Below 1.2 K, the transition temperature of Al, the dc I-V curves of such S-Sm-S junctions with a wide and short GaAs channel exhibited the classic features of S-N-S junctions including subharmonic energy gap structure (SGS) and excess current (EC) due to Andreev reflections at the interfaces

Original language	English
Journal	I E E E Transactions on Applied Superconductivity
Volume	7
Issue number	2
Pages (from-to)	2809-2812
ISSN	1051-8223
DOIs	https://doi.org/10.1109/77.621821
Publication status	Published - 1997
Event	Applied Superconductivity 96 - Pittsburgh, Pennsylvania Duration: 1 Jan 1996 → …

Conference

Conference	Applied Superconductivity 96
City	Pittsburgh, Pennsylvania
Period	01/01/1996 → …

Bibliographical note

Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide",

abstract = "We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm interface was compensated by inserting several Si δ-doped layers above the conduction layer and close to the surface of the GaAs heterostructure. Below 1.2 K, the transition temperature of Al, the dc I-V curves of such S-Sm-S junctions with a wide and short GaAs channel exhibited the classic features of S-N-S junctions including subharmonic energy gap structure (SGS) and excess current (EC) due to Andreev reflections at the interfaces",

author = "Taboryski, {Rafael Jozef} and Thomas Clausen and jonatan Kutchinsky and S{\o}rensen, {Claus B.} and Lindelof, {Poul Erik} and Hansen, {J{\o}rn Bindslev} and Jacobsen, {Claus Schelde}",

note = "Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; Applied Superconductivity 96 ; Conference date: 01-01-1996",

year = "1997",

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T1 - Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

AU - Taboryski, Rafael Jozef

AU - Clausen, Thomas

AU - Kutchinsky, jonatan

AU - Sørensen, Claus B.

AU - Lindelof, Poul Erik

AU - Hansen, Jørn Bindslev

AU - Jacobsen, Claus Schelde

N1 - Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1997

Y1 - 1997

N2 - We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm interface was compensated by inserting several Si δ-doped layers above the conduction layer and close to the surface of the GaAs heterostructure. Below 1.2 K, the transition temperature of Al, the dc I-V curves of such S-Sm-S junctions with a wide and short GaAs channel exhibited the classic features of S-N-S junctions including subharmonic energy gap structure (SGS) and excess current (EC) due to Andreev reflections at the interfaces

AB - We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm interface was compensated by inserting several Si δ-doped layers above the conduction layer and close to the surface of the GaAs heterostructure. Below 1.2 K, the transition temperature of Al, the dc I-V curves of such S-Sm-S junctions with a wide and short GaAs channel exhibited the classic features of S-N-S junctions including subharmonic energy gap structure (SGS) and excess current (EC) due to Andreev reflections at the interfaces

U2 - 10.1109/77.621821

DO - 10.1109/77.621821

M3 - Journal article

SN - 1051-8223

VL - 7

SP - 2809

EP - 2812

JO - I E E E Transactions on Applied Superconductivity

JF - I E E E Transactions on Applied Superconductivity

IS - 2

T2 - Applied Superconductivity 96

Y2 - 1 January 1996

ER -

Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

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