Superconducting vanadium/indium-arsenide hybrid nanowires

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

DOI

  • Author: Bjergfelt, Martin

    University of Copenhagen, Denmark

  • Author: Carrad, Damon James

    University of Copenhagen, Denmark

  • Author: Kanne, Thomas

    University of Copenhagen, Denmark

  • Author: Aagesen, Martin

    University of Copenhagen, Denmark

  • Author: Fiordaliso, Elisabetta M.

    Electron matter interaction, Nanocharacterization, National Centre for Nano Fabrication and Characterization, Technical University of Denmark, Fysikvej, 2800, Kgs. Lyngby, Denmark

  • Author: Johnson, Erik

    University of Copenhagen, Denmark

  • Author: Shojaei, Borzoyeh

    University of California at Santa Barbara, United States

  • Author: Palmstrøm, Chris J.

    University of California at Santa Barbara, United States

  • Author: Krogstrup, Peter

    University of Copenhagen, Denmark

  • Author: Jespersen, Thomas Sand

    University of Copenhagen, Denmark

  • Author: Nygard, Jesper

    University of Copenhagen, Denmark

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We report MBE synthesis of InAs/vanadium hybrid nanowires. The vanadium was deposited without breaking ultra-high vacuum after InAs nanowire growth, minimizing any effect of oxidation and contamination at the interface between the two materials. We investigated four different substrate temperatures during vanadium deposition, ranging from -150°C to 250°C. The structural relation between vanadium and InAs depended on the deposition temperature. The three lower temperature depositions gave vanadium shells with a polycrystalline, granular morphology and the highest temperature resulted in vanadium reacting with the InAs nanowire. We fabricated electronic devices from the hybrid nanowires and obtained a high out-of-plane critical magnetic field, exceeding the bulk value for vanadium. However, size effects arising from the nanoscale grains resulted in the absence of a well-defined critical temperature, as well as device-to-device variation in the resistivity vs. temperature dependence during the transition to the superconducting state.
Original languageEnglish
Article number294005
JournalNanotechnology
Volume30
Issue number29
Number of pages7
ISSN0957-4484
DOIs
Publication statusPublished - 2019
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Nanowires, Nanowire hybrids, Superconductor, Vanadium, Indium arsenide, TEM, MBE

ID: 172878790