Superconducting vanadium/indium-arsenide hybrid nanowires

Martin Bjergfelt, Damon James Carrad, Thomas Kanne, Martin Aagesen, Elisabetta M. Fiordaliso, Erik Johnson, Borzoyeh Shojaei, Chris J. Palmstrøm, Peter Krogstrup, Thomas Sand Jespersen, Jesper Nygard*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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We report MBE synthesis of InAs/vanadium hybrid nanowires. The vanadium was deposited without breaking ultra-high vacuum after InAs nanowire growth, minimizing any effect of oxidation and contamination at the interface between the two materials. We investigated four different substrate temperatures during vanadium deposition, ranging from -150°C to 250°C. The structural relation between vanadium and InAs depended on the deposition temperature. The three lower temperature depositions gave vanadium shells with a polycrystalline, granular morphology and the highest temperature resulted in vanadium reacting with the InAs nanowire. We fabricated electronic devices from the hybrid nanowires and obtained a high out-of-plane critical magnetic field, exceeding the bulk value for vanadium. However, size effects arising from the nanoscale grains resulted in the absence of a well-defined critical temperature, as well as device-to-device variation in the resistivity vs. temperature dependence during the transition to the superconducting state.
Original languageEnglish
Article number294005
Issue number29
Number of pages7
Publication statusPublished - 2019


  • Nanowires
  • Nanowire hybrids
  • Superconductor
  • Vanadium
  • Indium arsenide
  • TEM
  • MBE


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