Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

N. Le Gallou; Jens Vidkjær; C. Poivey

Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

N. Le Gallou
, Jens Vidkjær
, C. Poivey

European Space Agency - ESA

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%–82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.

Original language	English
Title of host publication	Proceedings of the 9th European Radar Conference (EuRAD) 2012
Publisher	IEEE
Publication date	2012
Pages	365-368
ISBN (Print)	978-1-4673-2471-7
Publication status	Published - 2012
Event	9th European Radar Conference (EuRAD) - Amsterdam, Netherlands Duration: 31 Oct 2012 → 2 Nov 2012 Conference number: 9

Conference

Conference	9th European Radar Conference (EuRAD)
Number	9
Country/Territory	Netherlands
City	Amsterdam
Period	31/10/2012 → 02/11/2012

Keywords

Gallium nitride
Ions
Logic gates
Power amplifiers
Power generation
Radio frequency
Transistors

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@inproceedings{f502fb42044348fc9bb1b757b27164bc,

title = "Suitability of GaN and LDMOS for 70–82\% efficiency 120–200W HPA addressing spaceborne P-band radar applications",

abstract = "This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70\%–82\% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.",

keywords = "Gallium nitride, Ions, Logic gates, Power amplifiers, Power generation, Radio frequency, Transistors ",

author = "\{Le Gallou\}, N. and Jens Vidkj{\ae}r and C. Poivey",

year = "2012",

language = "English",

isbn = "978-1-4673-2471-7",

pages = "365--368 ",

booktitle = "Proceedings of the 9th European Radar Conference (EuRAD) 2012",

publisher = "IEEE",

address = "United States",

note = "9th European Radar Conference (EuRAD), EuRAD ; Conference date: 31-10-2012 Through 02-11-2012",

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TY - GEN

T1 - Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

AU - Le Gallou, N.

AU - Vidkjær, Jens

AU - Poivey, C.

N1 - Conference code: 9

PY - 2012

Y1 - 2012

N2 - This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%–82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.

AB - This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%–82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.

KW - Gallium nitride

KW - Ions

KW - Logic gates

KW - Power amplifiers

KW - Power generation

KW - Radio frequency

KW - Transistors

M3 - Article in proceedings

SN - 978-1-4673-2471-7

SP - 365

EP - 368

BT - Proceedings of the 9th European Radar Conference (EuRAD) 2012

PB - IEEE

T2 - 9th European Radar Conference (EuRAD)

Y2 - 31 October 2012 through 2 November 2012

ER -

Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

Abstract

Conference

Keywords

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