Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

N. Le Gallou, Jens Vidkjær, C. Poivey

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%–82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.
Original languageEnglish
Title of host publicationProceedings of the 9th European Radar Conference (EuRAD) 2012
PublisherIEEE
Publication date2012
Pages365-368
ISBN (Print)978-1-4673-2471-7
Publication statusPublished - 2012
Event9th European Radar Conference (EuRAD) - Amsterdam, Netherlands
Duration: 31 Oct 20122 Nov 2012
Conference number: 9

Conference

Conference9th European Radar Conference (EuRAD)
Number9
CountryNetherlands
CityAmsterdam
Period31/10/201202/11/2012

Keywords

  • Gallium nitride
  • Ions
  • Logic gates
  • Power amplifiers
  • Power generation
  • Radio frequency
  • Transistors

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