Subsurface dimerization in III-V semiconductor (001) surfaces

C. Kumpf, L.D. Marks, D. Ellis, D. Smilgies, E. Landemark, M. Nielsen, R. Feidenhans'l, J. Zegenhagen, O. Bunk, J.H. Zeysing, Y. Su, R.L. Johnson

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume86
    Issue number16
    Pages (from-to)3586-3589
    ISSN0031-9007
    DOIs
    Publication statusPublished - 2001

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