Subsurface dimerization in III-V semiconductor (001) surfaces

C. Kumpf; L.D. Marks; D. Ellis; D. Smilgies; E. Landemark; M. Nielsen; R. Feidenhans'l; J. Zegenhagen; O. Bunk; J.H. Zeysing; Y. Su; R.L. Johnson

doi:10.1103/PhysRevLett.86.3586

Subsurface dimerization in III-V semiconductor (001) surfaces

C. Kumpf, L.D. Marks, D. Ellis, D. Smilgies, E. Landemark, M. Nielsen, R. Feidenhans'l, J. Zegenhagen, O. Bunk, J.H. Zeysing, Y. Su, R.L. Johnson

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model.

Original language	English
Journal	Physical Review Letters
Volume	86
Issue number	16
Pages (from-to)	3586-3589
ISSN	0031-9007
DOIs	https://doi.org/10.1103/PhysRevLett.86.3586
Publication status	Published - 2001

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title = "Subsurface dimerization in III-V semiconductor (001) surfaces",

abstract = "We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model. ",

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T1 - Subsurface dimerization in III-V semiconductor (001) surfaces

AU - Kumpf, C.

AU - Marks, L.D.

AU - Ellis, D.

AU - Smilgies, D.

AU - Landemark, E.

AU - Nielsen, M.

AU - Feidenhans'l, R.

AU - Zegenhagen, J.

AU - Bunk, O.

AU - Zeysing, J.H.

AU - Su, Y.

AU - Johnson, R.L.

PY - 2001

Y1 - 2001

N2 - We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model.

AB - We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model.

KW - Industrielle materialer

U2 - 10.1103/PhysRevLett.86.3586

DO - 10.1103/PhysRevLett.86.3586

M3 - Journal article

SN - 0031-9007

VL - 86

SP - 3586

EP - 3589

JO - Physical Review Letters

JF - Physical Review Letters

IS - 16

ER -

Subsurface dimerization in III-V semiconductor (001) surfaces

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