Substrate Effects in Wideband SiGe HBT Mixer Circuits

Tom Keinicke Johansen; Jens Vidkjær; Viktor Krozer

Substrate Effects in Wideband SiGe HBT Mixer Circuits

Tom Keinicke Johansen, Jens Vidkjær, Viktor Krozer

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.

Original language	English
Title of host publication	2005 European Gallium Arsenide and other Compound Semiconductors Applications Symposium
Publisher	IEEE
Publication date	2005
Pages	469-472
ISBN (Print)	88-902012-0-7
Publication status	Published - 2005
Event	European Gallium Arsenide and other Compound Semiconductors Applications Symposium - Duration: 1 Jan 2005 → …

Conference

Conference	European Gallium Arsenide and other Compound Semiconductors Applications Symposium
Period	01/01/2005 → …

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Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{b4f5885172444088898afa7582e0ea22,

title = "Substrate Effects in Wideband SiGe HBT Mixer Circuits",

abstract = "In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.",

author = "Johansen, {Tom Keinicke} and Jens Vidkj{\ae}r and Viktor Krozer",

note = "Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; European Gallium Arsenide and other Compound Semiconductors Applications Symposium ; Conference date: 01-01-2005",

year = "2005",

language = "English",

isbn = "88-902012-0-7",

pages = "469--472",

booktitle = "2005 European Gallium Arsenide and other Compound Semiconductors Applications Symposium",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - Substrate Effects in Wideband SiGe HBT Mixer Circuits

AU - Johansen, Tom Keinicke

AU - Vidkjær, Jens

AU - Krozer, Viktor

N1 - Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2005

Y1 - 2005

N2 - In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.

AB - In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.

M3 - Article in proceedings

SN - 88-902012-0-7

SP - 469

EP - 472

BT - 2005 European Gallium Arsenide and other Compound Semiconductors Applications Symposium

PB - IEEE

T2 - European Gallium Arsenide and other Compound Semiconductors Applications Symposium

Y2 - 1 January 2005

ER -

Substrate Effects in Wideband SiGe HBT Mixer Circuits

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