Substrate Effects in Wideband SiGe HBT Mixer Circuits

Tom Keinicke Johansen, Jens Vidkjær, Viktor Krozer

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    Abstract

    In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.
    Original languageEnglish
    Title of host publication2005 European Gallium Arsenide and other Compound Semiconductors Applications Symposium
    PublisherIEEE
    Publication date2005
    Pages469-472
    ISBN (Print)88-902012-0-7
    Publication statusPublished - 2005
    EventEuropean Gallium Arsenide and other Compound Semiconductors Applications Symposium -
    Duration: 1 Jan 2005 → …

    Conference

    ConferenceEuropean Gallium Arsenide and other Compound Semiconductors Applications Symposium
    Period01/01/2005 → …

    Bibliographical note

    Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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