Substrate Effects in Wideband SiGe HBT Mixer Circuits

Tom Keinicke Johansen, Jens Vidkjær, Viktor Krozer

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Abstract

In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.
Original languageEnglish
Title of host publication2005 European Gallium Arsenide and other Compound Semiconductors Applications Symposium
PublisherIEEE
Publication date2005
Pages469-472
ISBN (Print)88-902012-0-7
Publication statusPublished - 2005
EventEuropean Gallium Arsenide and other Compound Semiconductors Applications Symposium -
Duration: 1 Jan 2005 → …

Conference

ConferenceEuropean Gallium Arsenide and other Compound Semiconductors Applications Symposium
Period01/01/2005 → …

Bibliographical note

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