Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor

Zhangcheng Xu, Dan Birkedal, Michael Juhl, Jørn Märcher Hvam

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Abstract

The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30°C were measured using the Hakki–Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm–1 and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode.
Original languageEnglish
JournalApplied Physics Letters
Volume85
Issue number15
Pages (from-to)3259-3261
ISSN0003-6951
DOIs
Publication statusPublished - 2004

Bibliographical note

Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • LAYER
  • REFRACTIVE-INDEX
  • POWER
  • DIODE-LASER
  • DIFFERENTIAL GAIN
  • GROWTH
  • WELL LASERS
  • EFFICIENCY

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