Submonolayer InGaAs/GaAs quantum-dot lasers with high modal  gain and zero-linewidth enhancement  factor

Zhangcheng Xu; Dan Birkedal; Michael Juhl; Jørn Märcher Hvam

doi:10.1063/1.1806564

Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor

Zhangcheng Xu, Dan Birkedal, Michael Juhl, Jørn Märcher Hvam

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Abstract

The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30°C were measured using the Hakki–Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm^–1 and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode.

Original language	English
Journal	Applied Physics Letters
Volume	85
Issue number	15
Pages (from-to)	3259-3261
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1806564
Publication status	Published - 2004

Bibliographical note

Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

LAYER
REFRACTIVE-INDEX
POWER
DIODE-LASER
DIFFERENTIAL GAIN
GROWTH
WELL LASERS
EFFICIENCY

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title = "Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor",

abstract = "The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30°C were measured using the Hakki–Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm–1 and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode.",

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author = "Zhangcheng Xu and Dan Birkedal and Michael Juhl and Hvam, {J{\o}rn M{\"a}rcher}",

note = "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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AU - Xu, Zhangcheng

AU - Birkedal, Dan

AU - Juhl, Michael

AU - Hvam, Jørn Märcher

N1 - Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2004

Y1 - 2004

N2 - The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30°C were measured using the Hakki–Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm–1 and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode.

AB - The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30°C were measured using the Hakki–Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm–1 and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode.

KW - LAYER

KW - REFRACTIVE-INDEX

KW - POWER

KW - DIODE-LASER

KW - DIFFERENTIAL GAIN

KW - GROWTH

KW - WELL LASERS

KW - EFFICIENCY

U2 - 10.1063/1.1806564

DO - 10.1063/1.1806564

M3 - Journal article

SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -