Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

Jean Godin, V. Nodjiadjim, Muriel Riet, Pierre Berdaguer, O. Drisse, Eric Derouin, Agnieszka Konczykowska, Jean Moulu, Jean-Yves Dupuy, Fellipe Jorge, Jean-Louis Gentner, Viktor Krozer, Tom Keinicke Johansen, Andre Scavennec

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We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD-HBT equations. These large signal models have allowed the design of 50-GHz clocked 50G Decision and 100G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest.
Original languageEnglish
Title of host publicationProceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium
Number of pages1
Publication date2008
ISBN (Print)978-1-4244-1939-5
Publication statusPublished - 2008
EventCompound Semiconductor Integrated Circuits Symposium -
Duration: 1 Jan 2008 → …


ConferenceCompound Semiconductor Integrated Circuits Symposium
Period01/01/2008 → …


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