Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

Jean Godin; V. Nodjiadjim; Muriel Riet; Pierre Berdaguer; O. Drisse; Eric Derouin; Agnieszka Konczykowska; Jean Moulu; Jean-Yves Dupuy; Fellipe Jorge; Jean-Louis Gentner; Viktor Krozer; Tom Keinicke Johansen; Andre Scavennec

doi:10.1109/CSICS.2008.28

Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

Jean Godin, V. Nodjiadjim, Muriel Riet, Pierre Berdaguer, O. Drisse, Eric Derouin, Agnieszka Konczykowska, Jean Moulu, Jean-Yves Dupuy, Fellipe Jorge, Jean-Louis Gentner, Viktor Krozer, Tom Keinicke Johansen, Andre Scavennec

III-V Lab

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Abstract

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD-HBT equations. These large signal models have allowed the design of 50-GHz clocked 50G Decision and 100G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest.

Original language	English
Title of host publication	Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium
Number of pages	1
Publisher	IEEE
Publication date	2008
ISBN (Print)	978-1-4244-1939-5
DOIs	https://doi.org/10.1109/CSICS.2008.28
Publication status	Published - 2008
Event	2008 IEEE Compound Semiconductor Integrated Circuits Symposium - Monterey, United States Duration: 12 Oct 2008 → 15 Oct 2008

Conference

Conference	2008 IEEE Compound Semiconductor Integrated Circuits Symposium
Country/Territory	United States
City	Monterey
Period	12/10/2008 → 15/10/2008

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Godin, J., Nodjiadjim, V., Riet, M., Berdaguer, P., Drisse, O., Derouin, E., Konczykowska, A., Moulu, J., Dupuy, J.-Y., Jorge, F., Gentner, J.-L., Krozer, V., Johansen, T. K., & Scavennec, A. (2008). Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs. In Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium IEEE. https://doi.org/10.1109/CSICS.2008.28

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title = "Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs",

abstract = "We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD-HBT equations. These large signal models have allowed the design of 50-GHz clocked 50G Decision and 100G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest.",

author = "Jean Godin and V. Nodjiadjim and Muriel Riet and Pierre Berdaguer and O. Drisse and Eric Derouin and Agnieszka Konczykowska and Jean Moulu and Jean-Yves Dupuy and Fellipe Jorge and Jean-Louis Gentner and Viktor Krozer and Johansen, {Tom Keinicke} and Andre Scavennec",

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doi = "10.1109/CSICS.2008.28",

language = "English",

isbn = "978-1-4244-1939-5",

booktitle = "Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium",

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note = "2008 IEEE Compound Semiconductor Integrated Circuits Symposium ; Conference date: 12-10-2008 Through 15-10-2008",

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Godin, J, Nodjiadjim, V, Riet, M, Berdaguer, P, Drisse, O, Derouin, E, Konczykowska, A, Moulu, J, Dupuy, J-Y, Jorge, F, Gentner, J-L, Krozer, V, Johansen, TK & Scavennec, A 2008, Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs. in Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium. IEEE, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, Monterey, California, United States, 12/10/2008. https://doi.org/10.1109/CSICS.2008.28

TY - GEN

T1 - Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

AU - Godin, Jean

AU - Nodjiadjim, V.

AU - Riet, Muriel

AU - Berdaguer, Pierre

AU - Drisse, O.

AU - Derouin, Eric

AU - Konczykowska, Agnieszka

AU - Moulu, Jean

AU - Dupuy, Jean-Yves

AU - Jorge, Fellipe

AU - Gentner, Jean-Louis

AU - Krozer, Viktor

AU - Johansen, Tom Keinicke

AU - Scavennec, Andre

PY - 2008

Y1 - 2008

N2 - We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD-HBT equations. These large signal models have allowed the design of 50-GHz clocked 50G Decision and 100G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest.

AB - We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD-HBT equations. These large signal models have allowed the design of 50-GHz clocked 50G Decision and 100G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest.

U2 - 10.1109/CSICS.2008.28

DO - 10.1109/CSICS.2008.28

M3 - Article in proceedings

SN - 978-1-4244-1939-5

BT - Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium

PB - IEEE

T2 - 2008 IEEE Compound Semiconductor Integrated Circuits Symposium

Y2 - 12 October 2008 through 15 October 2008

ER -

Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

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